| PART |
Description |
Maker |
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| IRFI530G |
HEXFET POWER MOSFET HEXFET功率MOSFET
HEXFET? Power MOSFET
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRLI530G IRLI530GPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET
HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.16惟 , ID=9.7A )
HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.16Ω , ID=9.7A )
|
International Rectifier
|
| IRL3714L IRL3714S IRL3714 IRL3714STRR |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 36A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 20V的五（巴西）直| 36A条（丁）|63AB
HEXFET? Power MOSFET
Power MOSFET(Vdss=20V, Rds(on)max=20mohm, Id=36A)
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
http://
IRF[International Rectifier]
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRLI2203N 2308 |
30V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET
From old datasheet system
|
IRF[International Rectifier]
|
| IRFI1310G |
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET
|
International Rectifier
|
| IRFI9Z24N |
-55V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET Power MOSFET
|
International Rectifier
|
| IRL630S 2288 IRL630STRR IRL630STRL |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
From old datasheet system
HEXFET? Power MOSFET
|
International Rectifier
|
| IRFR430A IRFU430A IRFU430APBF |
500V Single N-Channel HEXFET Power MOSFET in a I-Pak package
HEXFET? Power MOSFET
SMPS MOSFET
|
IRF[International Rectifier]
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
